Composite channel field effect transistor and method of...

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

356/149

H01L 29/78 (2006.01) H01L 21/265 (2006.01) H01L 21/70 (2006.01) H01L 29/10 (2006.01) H01L 29/34 (2006.01)

Patent

CA 1057418

COMPOSITE CHANNEL FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATION Abstract of the Disclosure An improved composite channel field effect transistor and method of fabrication, which exhibits high density characteristics and yields high performance with less sensivity to threshold shift due to hot electrons when operated at high source to drain voltage levels.

268530

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Composite channel field effect transistor and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Composite channel field effect transistor and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composite channel field effect transistor and method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-783720

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.