Composite memory material comprising a mixture of...

Details Composite memory material comprising a mixture of... Composite memory material comprising a mixture of...

G - Physics

11

C

G11C 11/34 (2006.01) H01L 45/00 (2006.01)

Patent

CA 2269856

A composite memory material (36) comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures of alloys thereof. A single cell memory element (30) comprising the aforementioned composite memory material (36), and a pair of spacedly disposed contacts (6, 8).

L'invention concerne un matériau composite à mémoire (36) comprenant un mélange de matériau à mémoire actif de changement de phase et un matériau diélectrique inactif. Le matériau de changement de phase comprend un ou plusieurs éléments sélectionnés dans le groupe constitué par Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O et des mélanges d'alliage de ceux-ci. Un élément à mémoire (30) à cellule unique comprend le matériau composite à mémoire (36) précité et une paire de contacts espacés (6, 8).

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