Composite semiconductor device

Details Composite semiconductor device Composite semiconductor device

H - Electricity

01

L

356/149

H01L 27/06 (2006.01) H01L 27/07 (2006.01) H01L 29/68 (2006.01) H01L 29/73 (2006.01)

Patent

CA 1279409

ABSTRACT OF THE DISCLOSURE Disclosed is a composite semiconductor device which comprises: a second and a third semiconductor regions of a second conductivity type formed in a first semiconductor region of a first conductivity type inde- pendently of each other and so as to be exposed on one main surface of a semiconductor substrate; a fourth and a fifth semiconductor regions of the first conductivity type formed in the second semiconductor region independently of each other and so as to be exposed on the one main surface of the semiconductor substrate; a first insulated gate electrode formed on the second semiconductor region located between the fifth and first semiconductor regions and exposed on the one main surface; a second insulated gate electrode formed on the first semiconductor region located between the second and third semiconductor regions and exposed on the one main surface; an electrode which shorts the fourth and third semiconductor regions; another electrode which shorts the second and fifth semiconductor regions; and a further electrode provided in the first semiconductor region.

542081

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