C - Chemistry – Metallurgy – 23 – F
Patent
C - Chemistry, Metallurgy
23
F
C23F 3/06 (2006.01) B24B 37/00 (2006.01) C09G 1/02 (2006.01) C09K 13/06 (2006.01) C23F 1/18 (2006.01) C23F 1/26 (2006.01) C23F 1/30 (2006.01) H01L 21/304 (2006.01) H01L 21/321 (2006.01)
Patent
CA 2431591
Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.
Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.
Levert Joseph
Mukherjee Shyama
Towery Daniel
Zhang Fan
Gowling Lafleur Henderson Llp
Honeywell International Inc.
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