Compositions of doped, co-doped and tri-doped semiconductor...

Details Compositions of doped, co-doped and tri-doped semiconductor... Compositions of doped, co-doped and tri-doped semiconductor...

H - Electricity

01

L

H01L 29/227 (2006.01) H01L 21/34 (2006.01) H01L 31/0296 (2006.01)

Patent

CA 2750002

The selection of materials for radiation detector applications is governed by fundamental physical properties of the materials. It is desirable that the material (e.g., CdZnTe compounds) should exhibit high electrical resistivity and an excellent ability to transport charge carriers generated by external radiation. However, unknown impurities and/or other native defects can also render the intrinsic CdZnTe compounds to have strong carrier trapping tendencies, thereby deteriorating a radiation detector's performance. Accordingly, CdZnTe and/or other semiconductor materials with improved carrier transport properties and depletion characteristics are needed. In accordance with embodiments of the present technology, a particular example of the semiconductor material includes tellurium, cadmium, and zinc with tellurium in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

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