Compositions of doped, co-doped and tri-doped semiconductor...

Details Compositions of doped, co-doped and tri-doped semiconductor... Compositions of doped, co-doped and tri-doped semiconductor...

C - Chemistry, Metallurgy

30

B

C30B 11/00 (2006.01) C30B 9/00 (2006.01)

Patent

CA 2644536

The selection of materials for radiation detector applications is governed by fundamental physical properties of the materials. It is desirable that the material (e.g., CdZnTe compounds) should exhibit high electrical resistivity and an excellent ability to transport charge carriers generated by external radiation. However, unknown impurities and/or other native defects can also render the intrinsic CdZnTe compounds to have strong carrier trapping tendencies, thereby deteriorating a radiation detector's performance. Accordingly, CdZnTe and/or other semiconductor materials with improved carrier transport properties and depletion characteristics are needed. In accordance with embodiments of the present technology, a particular example of the semiconductor material includes tellurium, cadmium, and zinc with tellurium in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

L'invention porte sur des matériaux semi-conducteurs utilisables dans des détecteurs de radiation. Un exemple particulier traite de matériaux semi-conducteurs incluant: le tellure, le cadmium et le zinc. Le tellure est en excès molaire par rapport au cadmium et au zinc. L'exemple inclut aussi l'aluminium à une concentration d'environ 10 à environ 20.000 parties d'atomes par milliard, et l'erbium à une concentration d'au moins 10.000 parties atomes par milliard.

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