C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 4/00 (2006.01) C23C 14/00 (2006.01) C23C 14/06 (2006.01) C23C 14/34 (2006.01) C30B 29/10 (2006.01) H01L 21/64 (2006.01)
Patent
CA 2419099
A carbon hydrogen raw material gas and a SF6 raw material gas are introduced into a chamber, and a high frequency electric power is introduced into the chamber to discharge the raw material gas to be made plasma. At the same time, a metallic plate on a main surface of one of parallel plate electrodes is sputtered to form a compound film made of carbon, sulfide and metallic elements which are dispersed in the film matrix made of carbon and sulfide and does not constitute clusters through aggregation.
Matsushita Masaki
Morita Shinzo
Nagoya University
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
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