Compound film, and method for fabrication the same

Details Compound film, and method for fabrication the same Compound film, and method for fabrication the same

C - Chemistry, Metallurgy

23

C

C23C 4/00 (2006.01) C23C 14/34 (2006.01) H01L 21/64 (2006.01)

Patent

CA 2512478

A carbon hydrogen raw material gas and a SF6 raw material gas are introduced into a chamber, and a high frequency electric power is introduced into the chamber to discharge the raw material gas to be made plasma. At the same time, a metallic plate on a main surface of one of parallel plate electrodes is sputtered to form a compound film made of carbon, sulfide and metallic elements which are dispersed in the film matrix made of carbon and sulfide and does not constitute clusters through aggregation.

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