H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/812 (2006.01) H01L 21/285 (2006.01) H01L 21/335 (2006.01) H01L 29/423 (2006.01) H01L 29/778 (2006.01)
Patent
CA 2110790
ABSTRACT OF THE DISCLOSURE This invention relates to a compound semiconductor device with an innovational recess structure which can improve characteristics. An insulating film with an opening formed in a portion thereof is formed on a cap layer on a donor supply layer. The cap layer is etched through the opening, whereby the recess structure which is extended into the donor supply layer and a wider etched space than an area of the opening is formed. In the recess structure there is formed by vacuum vaporization a Schottky gate electrode which is in Schottky junction only with the donor supply layer, extended upward through the opening and overlapped on a portion of the upper surface of the insulating film. The Schottky gate electrode tightly shields the interior of the recess structure form outside ambient atmosphere. As a result, a problem that impurities intrude into a portion of the donor supply layer exposed in the recess structure and deteriorate electric characteristics.
Marks & Clerk
Sumitomo Electric Industries Ltd.
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