Compound semiconductor integrated circuit device

Details Compound semiconductor integrated circuit device Compound semiconductor integrated circuit device

H - Electricity

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H01L 27/06 (2006.01) H01L 21/8252 (2006.01) H01L 29/205 (2006.01) H01L 29/737 (2006.01) H01L 29/778 (2006.01) H01L 29/80 (2006.01)

Patent

CA 1222330

COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE ABSTRACT OF THE DISCLOSURE A compound semiconductor integrated circuit device including a heterojunction bipolar transistor and a field effect transistor, the heterojunction bipolar transistor has three type n-p-n or p-n-p compound semiconductor layers and makes a channel region or a channel-electron-supplying region of a field effect transistor with one of the three compound semiconductor layers.

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