Compound semiconductor light emitting device

Details Compound semiconductor light emitting device Compound semiconductor light emitting device

H - Electricity

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345/51

H01L 33/00 (2006.01) C30B 25/02 (2006.01) H01S 5/323 (2006.01)

Patent

CA 1313247

ABSTRACT There is provided a short wavelength oscillating semiconductor light emitting device having a uniform and high light emitting intensity, which includes a monocrystalline thin film of a compound semiconductor expressed as the equation (A?zGa1-z)xIn1-xP (x is a number where lattice-matching on the GaAs substrate can be realized, and where z is a number within a range from 0.08 to 0.25). This semiconductor light emitting device is manufactured by the metal organic chemical vapor deposition method. Namely, this light emitting device is provided by transporting the material gaseous phase mixture into a lateral type reactive tube at a feed flow rate of less than 30 cm/sec and at a pressure within the tube of less than 60 torr, and growing the crystal film while rotating the substrate surface so inclined as to have an angle of 3 to 45° relative to the horizontal direction about the axis in a direction perpendicular thereto.

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