Compound semiconductor light emitting device and method of...

H - Electricity – 01 – L

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H01L 33/00 (2006.01)

Patent

CA 2170922

A high performance compound semiconductor light emitting device and a method which can industrially prepare the same are provided. The compound semiconductor light emitting device includes a GaAs, GaP, InAs or InP substrate, a buffer layer consisting of GaN, having a thickness of 10 nm to 80 nm, which is formed on the substrate, an epitaxial layer consisting of Al x Ga1-x N(0 ~ x < 1) which is formed on the buffer layer, an incommensurate plane which is located on the interface between the buffer layer and the epitaxial layer, a light emitting layer which is formed on the epitaxial layer, and a clad layer which is formed on the light emitting layer. The buffer layer is formed by organic metal chloride vapor phase epitaxy at a first temperature, while the epitaxial layer is formed by organic metal chloride vapor phase epitaxy at a second temperature which is higher than the first temperature. The light emitting layer preferably consists of In y Ga1-y N(0< y < 1) which is doped with Mg.

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