H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 33/00 (2006.01)
Patent
CA 2170922
A high performance compound semiconductor light emitting device and a method which can industrially prepare the same are provided. The compound semiconductor light emitting device includes a GaAs, GaP, InAs or InP substrate, a buffer layer consisting of GaN, having a thickness of 10 nm to 80 nm, which is formed on the substrate, an epitaxial layer consisting of Al x Ga1-x N(0 ~ x < 1) which is formed on the buffer layer, an incommensurate plane which is located on the interface between the buffer layer and the epitaxial layer, a light emitting layer which is formed on the epitaxial layer, and a clad layer which is formed on the light emitting layer. The buffer layer is formed by organic metal chloride vapor phase epitaxy at a first temperature, while the epitaxial layer is formed by organic metal chloride vapor phase epitaxy at a second temperature which is higher than the first temperature. The light emitting layer preferably consists of In y Ga1-y N(0< y < 1) which is doped with Mg.
Koukitu Akinori
Matsubara Hideki
Matsushima Masato
Miura Yoshiki
Seki Hisashi
G. Ronald Bell & Associates
Sumitomo Electric Industries Ltd.
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