Compound semiconductor photodetector and method of making same

Details Compound semiconductor photodetector and method of making same Compound semiconductor photodetector and method of making same

H - Electricity

01

L

H01L 31/06 (2006.01) H01L 31/0256 (2006.01) H01L 31/065 (2006.01) H01L 31/103 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2167457

InGaAs photodiodes are produced on an epitaxial InP wafer having an InP substrate, epitaxially-grown layers and an InGaAs light-sensing layer. An insulating-protecting film of Si x N y or of SiO x is deposited thereon with openings selectively in the epitaxial wafer. Compound semiconductor undercoat layers of a compound semiconductor are then grown having a band gap which is narrower than InP on the InP window layers at the openings by utilizing the insulating-protecting film as a mask. A p-type impurity is diffused from a solid source or from a gas source through the undercoat layers and the epitaxial InP layer into the InGaAs light-sensing layer. P-electrodes are formed on the undercoat layers and the undercoat layers are then etched by utilizing the p-electrodes as a mask. Alternatively, the undercoat layers may be shaped by selective etching in the form of p-electrodes and forming the p- electrodes on the undercoat layers.

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