Compound semiconductor single-crystal manufacturing device...

C - Chemistry – Metallurgy – 30 – B

Patent

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C30B 23/08 (2006.01) C23C 14/28 (2006.01) H01L 21/203 (2006.01)

Patent

CA 2694496

A compound semiconductor single-crystal manufacturing device (1) is furnished with: a laser light source (6) making it possible to sublime a source material by directing a laser beam onto the material; a reaction vessel (2) having a laser entry window (5) through which the laser beam output from the laser light source (6) can be transmitted to introduce the beam into the vessel interior, and that is capable of retaining a starting substrate (3) where sublimed source material is recrystallized; and a heater (7) making it possible to heat the starting substrate (3). The laser beam is shone on, to heat and thereby sublime, the source material within the reaction vessel (2), and compound semiconductor single crystal is grown by recrystallizing the sublimed source material onto the starting substrate (3); afterwards the laser beam is employed to separate the compound semiconductor single crystal from the starting substrate (3).

L'invention porte sur un appareil (1) de fabrication d'un monocristal de semi-conducteur composé doté d'une source de lumière laser (6) qui peut sublimer une matière par application d'un faisceau laser à la matière ; d'un récipient de réaction (2), qui a une fenêtre d'introduction de laser (5) qui peut faire passer le faisceau laser émis par la source de lumière laser (6) et qui peut introduire le faisceau laser dans le récipient et qui contient un substrat de base (3) qui recristallise la matière sublimée ; et d'un dispositif de chauffage (7) qui peut chauffer le substrat de base (3). La matière dans le récipient de réaction (2) est sublimée par chauffage de la matière par application du faisceau laser à la matière, et la matière sublimée est recristallisée sur le substrat de base (3) pour faire croître le monocristal de semi-conducteur composé. Ensuite, le monocristal de semi-conducteur composé est séparé du substrat de base (3) à l'aide du faisceau laser.

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