Compound semiconductor wafer and manufacturing method thereof

Details Compound semiconductor wafer and manufacturing method thereof Compound semiconductor wafer and manufacturing method thereof

H - Electricity

01

L

H01L 31/10 (2006.01) H01L 21/00 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01) H01L 29/732 (2006.01) H01L 31/0328 (2006.01) H01L 31/0336 (2006.01) H01L 31/072 (2006.01) H01L 31/109 (2006.01)

Patent

CA 2486986

A compound semiconductor wafer producing a crystalline InGaAs light receiving layer suitable for a near infrared sensor, comprising sandwiched between the InP substrate (11) and the InGaAs layer, an In~xAs~1-xP graded buffer layer (12a, 12b, 12c, 12d, 12e) consisting of a plurality of layers located above an InP substrate (11), and an In~yAs~1-yP buffer layer (13) located above the graded buffer layer, wherein the maximum PL emission intensity on the interfaces of respective graded buffer layers and the buffer layer is less than 3/10 of the maximum PL emission intensity of the buffer layer.

Cette invention concerne un tranche ~ semi-conducteurs composite produisant une couche cristalline InGaAs photor~ceptrice qui convient pour un d~tecteur de rayonnement proche infrarouge et qui comprend, entre un substrat InP (11) et la couche InGaAs, un couche tampon en gradin In´x?As´1-x?P (12a, 12b, 12c, 12d, 12e) compos~e d'une pluralit~ de couches dispos~e au-dessus d'un substrat InP (11) et une couche tampon In´y?As´1-y?P (13) dispos~e au dessus de la couche tampon en gradin, l'intensit~ d'~mission PL maximum sur les interfaces des couches tampons en gradin respectives et de la couche tampon ~tant inf~rieure ~ 3/10 de l'intensit~ d'~mission PL maximum de la couche tampon.

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