C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 25/02 (2006.01) C22C 9/00 (2006.01) C30B 29/40 (2006.01) H01L 21/285 (2006.01) H01L 23/532 (2006.01)
Patent
CA 2112447
A NEW COMPOUND WITH ROOM-TEMPERATURE ELECTRICAL RESISTIVITY COMPARABLE TO THAT OF ELEMENTAL COPPER ABSTRACT OF THE DISCLOSURE The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu3Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.
Aboelfotoh Mohamed O.
Brady M. John
Krusin-Elbaum Lis
International Business Machines Corporation
Saunders Raymond H.
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