Compounds and infrared devices including in1-xtlxq, where q...

Details Compounds and infrared devices including in1-xtlxq, where q... Compounds and infrared devices including in1-xtlxq, where q...

H - Electricity

01

L

H01L 31/00 (2006.01) H01L 29/201 (2006.01) H01L 31/0304 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2197295

A semiconductor layer of In1-xTlxQ carried on a substrate forms an infrared device, where Q is selected from the group consisting essentially of As1-yPy and 0 < x < 1, 0 <= y <= 1.

Une couche semi-conductrice de formule In¿1-X?Tl¿x?Q supportée sur un substrat forme un dispositif infra-rouge; dans cette formule, Q est sélectionné dans le groupe se composant essentiellement de As¿1-y?P¿y? et 0 < x < 1, 0 <= y <= 1.

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