Computer controlled system and process for processing...

Details Computer controlled system and process for processing... Computer controlled system and process for processing...

H - Electricity

01

L

356/118

H01L 21/306 (2006.01) C30B 33/00 (2006.01) H01L 21/00 (2006.01)

Patent

CA 1161966

ABSTRACT Automated reactor system and process for etching or otherwise processing semiconductor wafers in a plasma environment. The wafers are carried into and out of a reaction chamber by a conveyor and processed on an individual basis. Within the chamber, an electrode mounted on a swinging arm carries each wafer from the conveyor to a processing position adjacent to a stationary electrode. Gas is admitted to the chamber, and the electrodes are energized to ionize the gas and form a plasma for processing the wafer between the electrodes.

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