Conductive metal-filled substrates without developing agents

Details Conductive metal-filled substrates without developing agents Conductive metal-filled substrates without developing agents

B - Operations, Transporting

29

C

18/1211

B29C 51/02 (2006.01)

Patent

CA 1316661

Abstract of the Disclosure A conductive metal-filled substrate is formed by intermingling copper or nickel particles into a substrate having a softening point of at least 200°C followed by compression molding at a temperature of at least 200°C. The filled substrates are electrically conductive and are useful for a variety of uses such as EMI shielding.

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