Conductor access bubble memory

Details Conductor access bubble memory Conductor access bubble memory

G - Physics

11

C

352/37.2

G11C 11/14 (2006.01) G11C 19/08 (2006.01) H01F 10/06 (2006.01)

Patent

CA 1118097

1 BOBECK, A. H. 119/120/121/122 Abstract A conductor-access magnetic bubble memory comprises an electrically-conductive film (12) provided with a pattern of sequences of apertures (14) therethrough. Each aperture defines, in an adjoining layer (11) of a bubble propagating material, a preferred site for a bubble during intervals when current is caused to flow through the film. Means, such as ion implanted regions (15) within the adjoining layer, or permalloy elements (123) associated with each aperture, define other preferred sites for bubbles offset from the aperture defined sites, whereby, upon termination of the current flow through the film, the bubbles automatically (without the use of external drive means) advance to the offset sites, thus ensuring movement of the bubbles in prescribed directions (FIG. 1).

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