Confinement layer of buried heterostructure semiconductor laser

Details Confinement layer of buried heterostructure semiconductor laser Confinement layer of buried heterostructure semiconductor laser

H - Electricity

01

S

H01S 5/227 (2006.01) H01S 5/22 (2006.01)

Patent

CA 2328641

A laser device having an improved electrical confinement has been disclosed. The confinement of laser is composed of a material of AlInAs doped with oxygen. Also, it may further comprises aluminum oxide (Al2O3), which may take the form of an aluminum oxide (Al2O3) layer formed along the interface between the confinement and neighboring components of the device.

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