Confinement of secondary electrons in plasma ion processing

Details Confinement of secondary electrons in plasma ion processing Confinement of secondary electrons in plasma ion processing

H - Electricity

01

J

H01J 37/317 (2006.01) C23C 14/48 (2006.01) H01J 37/32 (2006.01)

Patent

CA 2130309

-20- CONFINEMENT OF SECONDARY ELECTRONS IN PLASMA ION PROCESSING ABSTRACT OF THE DISCLOSURE A plasma ion implantation apparatus (50) includes a vacuum chamber (52) that receives an object (70) to be ion implanted within its walls (66). The object (70) is supported upon an electrically conductive base (72) that is electrically isolated from the wall (66) of the vacuum chamber (52). An electrically conductive enclosure (74) is positioned between the object (70) and the wall (66) of the vacuum chamber (52) and supported upon the base (72). The enclosure (74) is made of an electrically conductive material. A plasma source (58) is positioned so as to create a plasma (68) in the vicinity of the object (70) to be implanted. A voltage source applies an electrical voltage to the base (72) and thence the enclosure (74) relative to the wall (66) of the vacuum chamber (52). Secondary electrons emitted from the object (70) during ion implantation are reflected back into the plasma (68) by the enclosure (74), reducing X-ray production and improving plasma efficiency.

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