H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/183
H01L 23/14 (2006.01) H01L 21/58 (2006.01) H01L 21/60 (2006.01) H01L 23/492 (2006.01)
Patent
CA 1189984
A B S T R A C T A contact structure for securing a semiconductor substrate to a mounting body in a semiconductor device. A multi-layered electrode formed on a surface of the semiconductor substrate, the multi-layered electrode comprising a chromium-nickel alloy layer formed on the surface, a nickel layer formed thereon and a noble metal layer selected from the group consisting of gold, silver, palladium and platinum formed further thereon, a solder layer, and a mounting means for holding the semiconductor substrate thereon, the solder layer soldering the multi-layered electrode to the mounting means, thereby bonding the semiconductor substrate to the mounting means. The foregoing construction has the features that there are substantially no voids at the solder layer as a result of good wetting of the noble metal to the solder layer; that the effective bonding area increases as a result of decrease of voids, resulting in decrease of thermal resistance by 10 to 20%; that secondary breakdown voltage increases by about 10%, thereby increasing reliability; that the bonding force is drastically increased; that process control in the soldering step becomes easier; that undesirable Sn-Ni formation is suppressed, thereby improving resistivity to thermal fatigue; and that oxidation of the surface of the multi-layered electrode is eliminated, thereby eliminating the necessity for preliminary treatment before soldering.
406337
Hattori Hirotsugu
Kuwagata Masahiro
Borden Ladner Gervais Llp
Matsushita Electronics Corporation
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