H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/133
H01L 27/04 (2006.01) H01L 23/485 (2006.01) H01L 23/532 (2006.01)
Patent
CA 1243422
- 11 - CONTACT VIAS IN SEMICONDUCTOR DEVICES Abstract A glass reflow step to round off sharp edges of contact vias is typically included in processes for making integrated-circuit devices. In the course of making such devices with closely spaced vias, it has been found that unacceptable overhangs occur on the sidewalls of the vias. Neither changes in the composition of the glass nor modifications in the processing parameters of reflow were effective to avoid the overhang phenomenon. In accordance with the invention, it has been discovered that the overhang problem can be consistently avoided if the ratio of glass thickness to via-to-via spacing is about ? 0.393. (FIG. 2).
521705
Levy Roland A.
Nassau Kurt
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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