Contacting structure on a semiconductor arrangement

Details Contacting structure on a semiconductor arrangement Contacting structure on a semiconductor arrangement

H - Electricity

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356/186

H01L 21/28 (2006.01) H01L 33/00 (2006.01) H01S 5/18 (2006.01) H01S 5/22 (2006.01)

Patent

CA 1089571

ABSTRACT OF THE DISCLOSURE: In a new contacting structure on a semiconductor substrate, the upper surface of the substrate made of a material corres- ponding to the formula As1-x Alx Ga, with x#0.3, is partly covered by a layer of gallium arsenide. The whole of this surface is covered with a metallic layer. The zones of electrical current are localised below the layer of gallium arsenide.

278081

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