Contacts to shallow p-n junctions

Details Contacts to shallow p-n junctions Contacts to shallow p-n junctions

H - Electricity

01

L

356/134

H01L 21/28 (2006.01) H01L 21/265 (2006.01) H01L 21/285 (2006.01)

Patent

CA 1120607

CONTACTS TO SHALLOW P-N JUNCTIONS Abstract Deep penetration spikes, when a fused metal contact is made to semiconductor material, can be avoided by converting a portion of exposed crystalline semiconductor material to a layer of amorphous semiconductor material. The converted portion is the volume of the semiconductor material required to saturate the metal during a post-metallization annealing step. Y0978-004

337494

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