Contemporaneous fabrication of double heterostructure light...

Details Contemporaneous fabrication of double heterostructure light... Contemporaneous fabrication of double heterostructure light...

H - Electricity

01

S

345/32

H01S 3/00 (2006.01)

Patent

CA 1139411

CONTEMPORANEOUS FABRICATION OF DOUBLE HETEROSTRUCTURE LIGHT EMITTING DIODES AND LASER DIODES USING LIQUID PHASE EPITAXY Abstract of the Disclosure In the manufacture of double heterostructure laser diodes using liquid phase epitaxy a source crystal precedes the laser substrate crystal through the process to ensure saturation of the various melts from which epitaxial growth is obtained. The source crystal has hitherto been discarded. The source crystal, since it immediately precedes the substrate crystal, also experiences epitaxial growth of a heterostructure but with heterostructure layer thicknesses unsuited for laser diode fabrication. By suitable processing of the source crystal after it is formed with a heterostructure, light emitting diodes can be produced so contributing to a 50% reduction in materials cost. _ j _ -i-

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