Continuous chemical vapor deposition reactor

Details Continuous chemical vapor deposition reactor Continuous chemical vapor deposition reactor

C - Chemistry, Metallurgy

30

B

32/23, 148/2.1

C30B 25/00 (2006.01) C23C 16/54 (2006.01) C23C 16/44 (2006.01)

Patent

CA 1068582

Abstract of the Invention Disclosed is a vapor deposition reactor comprising a series of individual gas cells respectively isolated from each other and containing a particular reactive or non- reactive gas required for one stage in a deposition process. Each cell is provided with an independent temperature control. A substrate is mounted on a carrier and transported through the series of individual cells so that vapor depositions or other related processes may be conducted or performed upon the substrate. Chemical vapor deposition processes such as growth of epitaxial layer, deposition of polycrystalline silicon, nitride, oxide or metals on a substrate may be performed within the reactor.

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