Contoured-tub fermi-threshold field effect transistor and...

H - Electricity – 01 – L

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H01L 29/78 (2006.01) H01L 21/265 (2006.01) H01L 21/335 (2006.01) H01L 21/336 (2006.01) H01L 29/10 (2006.01)

Patent

CA 2206346

A Fermi-threshold field effect transistor includes a contoured-tub region of the same conductivity type as the source, drain and channel regions and having nonuniform tub depth. The contoured-tub is preferably deeper under the source and/or drain regions than under the channel region. Thus, the tub-substrate junction is deeper under the source and/or drain regions than under the channel region. The diffusion capacitance is thereby reduced compared to a tub having a uniform tub depth, so that a high saturation current is produced at low voltages. The contoured-tub may be formed by an additional implant into the substrate using the gate as a mask.

Transistor à effet de champ à seuil de Fermi qui comporte une région de bac profilée du même type de conductivité que les régions de source, de drain et de canal, et présente une profondeur de bac non uniforme. Le bac profilé est de préférence plus profond sous les régions de source et/ou de drain que sous la région de canal. Par conséquent, la jonction bac-substrat est plus profonde sous les régions de source et/ou de drain que sous la région de canal. La capacité de diffusion est donc réduite en comparaison à un bac ayant une profondeur uniforme, si bien qu'un courant de saturation est produit à des tensions basses. Ledit bac profilé peut être formé par un implant supplémentaire dans le substrat en utilisant la grille comme masque.

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