Control circuitry using a pull-down transistor for high...

Details Control circuitry using a pull-down transistor for high... Control circuitry using a pull-down transistor for high...

H - Electricity

03

K

328/196

H03K 17/56 (2006.01) H01L 27/08 (2006.01) H03K 17/567 (2006.01)

Patent

CA 1146639

CONTROL CIRCUITRY USING A PULL-DOWN TRANSISTOR FOR HIGH VOLTAGE SOLID-STATE SWITCHES Abstract of the Disclosure To switch a first gated diode switch (GDS) to the "OFF" state requires a voltage applied to the gate which is more positive than that of the anode or cathode and the sourcing of current into the gate which is of the same order of magnitude as flows between the anode and cathode. Control circuitry, which uses a second GDS coupled by the cathode to the gate of the first GDS, is used to control the state of the first GDS. The state of the second GDS is controlled by a branch circuit having a relatively modest current handling capability. An n-p-n junction transistor has the emitter and collector coupled to the cathode and gate, respectively, of the first GDS, and has the base coupled through a p-n-p transistor to the input terminal of the control circuitry. The n-p-n transistor facilitates a quick turn-on of the first GDS by rapidly bringing the potentials of the gate and cathode of the first GDS to levels which are close together.

366500

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