Control of atmosphere surrounding crystal growth zone

Details Control of atmosphere surrounding crystal growth zone Control of atmosphere surrounding crystal growth zone

C - Chemistry, Metallurgy

30

B

148/1.5

C30B 15/34 (2006.01) C30B 15/00 (2006.01)

Patent

CA 1180641

ABSTRACT OF THE DISCLOSURE: The invention pertains to growth of silicon bodies from a melt and comprises enveloping the liquid/solid interface with a mixture of an inert gas and more than a trace amount of a carbon-containing gas. The carbon- containing gas may be a compound of carbon and oxygen such as CO or CO2, and oxygen gas also may be intro- duced to the growth zone.

372570

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