Control of current spreading in semiconductor laser diodes

H - Electricity – 01 – S

Patent

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H01S 5/22 (2006.01) H01S 5/20 (2006.01)

Patent

CA 2388858

A semiconductor laser diode (1) and method are described, wherein the path of the current through the device between the positive (12) and negative (14), conductors is controlled. Lateral spread of the gain current in the active region is prevented by implanting protons in areas of the active layer (10) flanking a desired gain region (24). The implanted regions (26) become less conductive, and prevent lateral spread of the gain current. The position of the implanted regions (26) can be selected so that the gain current only crosses a portion of the active layer (10) that supports desired lateral modes of the laser light.

L'invention concerne une diode (1) laser à semi-conducteurs et un procédé consistant à commander la trajectoire du courant dans le dispositif entre les conducteurs positifs (12) et négatifs (14). La répartition latérale du courant de gain dans les régions actives est évitée par l'implantation de protons dans certaines zones de la couche active (10) bordant une zone (24) de gain souhaitée. Les zones (26) implantées deviennent moins conductrices et évitent la répartition latérale du courant de gain. La position des zones (26) implantées peut être choisie de manière que le courant de gain ne croise qu'une partie de la couche active (10) supportant des modes latéraux souhaités de la lumière laser.

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