Control of curvature of dielectrically isolated...

Details Control of curvature of dielectrically isolated... Control of curvature of dielectrically isolated...

H - Electricity

01

L

356/144

H01L 27/06 (2006.01) H01L 21/762 (2006.01)

Patent

CA 1039414

METHOD OF PREPARING A DIELECTRIC-ISOLATED SUBSTRATE FOR SEMICONDUCTOR INTEGRATED CIRCUITRIES ABSTRACT OF THE DISCLOSURE In the preparation of a dielectric-isolated substrate for semiconductor integrated circuitries which comprises a plurality of silicon single crystalline islands in which circuit elements are formed, a region made of an alternate laminate of silicon polycrystalline layers and silicon oxide films for supporting the plura- lity of silicon single crystalline islands, and a silicon oxide film interposed between the silicon single crystal- line islands and the support region for isolating each of the silicon single crystalline islands from the remain- ing ones and the support region, the formation of three to twelve silicon polycrystalline layers in the support region can remarkably reduce the bending of the substrate resulting from the growth stress of the silicon polycrystal- line layers or from the difference in thermal expansion coefficients between the single crystalline silicon and the polycrystalline silicon, and therefore produces a dielectric-isolated substrate showing little bending.

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