Control of etch rate of silicon dioxide in boiling...

Details Control of etch rate of silicon dioxide in boiling... Control of etch rate of silicon dioxide in boiling...

C - Chemistry, Metallurgy

09

K

149/17

C09K 13/04 (2006.01)

Patent

CA 1057633

Abstract of the Disclosure The etch rate of silicon dioxide, particularly thermally grown silicon dioxide, in boiling phosphoric acid, can be controlled by deliberately adding additional silicate to the acid. For thermally grown silicon dioxide, the etch rate can be reduced from about 5.ANG. per minute with no added silicate, to about 0.5.ANG./minute with 1 gram of added silicate to about 1 litre of acid. - i -

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