Control of oxygen in silicon crystals

Details Control of oxygen in silicon crystals Control of oxygen in silicon crystals

C - Chemistry, Metallurgy

30

B

148/1.5

C30B 15/00 (2006.01)

Patent

CA 1067800

CONTROL OF OXYGEN IN SILICON CRYSTALS Abstract of the Disclosure The seed to tail oxygen concentration gradient in silicon crys- tals, which are drawn from a silicon melt contained in a silica ves- sel according to the Czochralski process, is controlled by a process employing stop-go crucible rotation to provide fluid shearing at the melt-crucible interface.

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