Control of the hydrogen bonding in reactively sputtered...

Details Control of the hydrogen bonding in reactively sputtered... Control of the hydrogen bonding in reactively sputtered...

H - Electricity

01

L

204/96.14

H01L 31/20 (2006.01) C23C 14/00 (2006.01)

Patent

CA 1149773

ABSTRACT OF THE DISCLOSURE A reactively sputter photoconductive amorphous silicon film having a controlled monohydride and polyhydride bond density is produced by applying a voltage bias to the film's substrate during deposition.

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