H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/119, 356/9
H01L 29/82 (2006.01) G01R 33/06 (2006.01) H01L 29/10 (2006.01) H01L 29/68 (2006.01) H01L 29/868 (2006.01)
Patent
CA 1136772
Abstract A heretofore undiscovered suddenly conducting avalanche voltage effect is described with relation- ship to a new family of hybrid transistors which exhibit both lateral bipolar and field effect characteristics. The devices constructed also ex- hibit magnetic sensitivity. The magnetic respon- siveness of such devices creates a new family of magnetic sensors which utilize magnetic modulation of the avalanche voltage produced by the new effect. New transistor structure elements are incorporated in the devices. These include an impact ionization promoter means and an intrinsic, or high resistivity, depleted channel region which extends at least par- tially from a drain toward a source. Minority carrier injection efficiency control means and transportation efficiency control means are also included. The character of the region extending between the emissive junction at the source and the drain is carefully controlled so that the product, of the ionization current multiplication factor M and an electron-hole recombination probability factor .alpha. is less than unity. Within limits, any specifically desired avalanche voltage can be created by controlling the characteristics of the transistor structure. This voltage may then be varied bidirectionally by magnetic fields to form a new class of magnetic sensors.
327405
International Business Machines Corporation
Rosen Arnold
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