Controlled breakover bidirectional semiconductor switch

Details Controlled breakover bidirectional semiconductor switch Controlled breakover bidirectional semiconductor switch

H - Electricity

01

L

356/35

H01L 29/747 (2006.01) H01L 29/87 (2006.01)

Patent

CA 1189633

- 12 - CONTROLLED BREAKOVER BIDIRECTIONAL SEMICONDUCTOR SWITCH Abstract of the Disclosure A two-terminal bidirectional semiconductor switching device comprises a body of silicon semiconductor material having in one portion a five-zone switching element and, in another portion integral therewith, a three-zone bidirectional voltage-sensitive breakdown element, there being means including another portion of the body connecting the three-zone element as a gating element to said five-zone element so as to trigger conduction therein bidirectionally when voltage breakdown occurs in either direction in the three-zone element.

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