Controlled disproportionation of cuprous ions to deposit...

Details Controlled disproportionation of cuprous ions to deposit... Controlled disproportionation of cuprous ions to deposit...

C - Chemistry, Metallurgy

23

C

117/80

C23C 18/38 (2006.01) C23C 18/40 (2006.01)

Patent

CA 1060284

ABSTRACT OF THE DISCLOSURE This invention relates to processes and compositions for the deposition of metallic copper on a catalytically activated surface by the controlled disproportionation of cuprous ions. Cupric tetraammino ions in aqueous solution are rapidly reduced to cuprous diammino ions and the latter are acted upon by the addition of an activator-modifier so as to bring about controlled disproportionation resulting in the deposition of metallic copper principally on the catalytically activated surface of a workpiece.

229724

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