Controlled emission in heterojunction structures

Details Controlled emission in heterojunction structures Controlled emission in heterojunction structures

G - Physics

02

F

345/11

G02F 1/39 (2006.01) G02F 1/017 (2006.01) G02F 2/02 (2006.01) H01L 29/15 (2006.01) H01L 31/12 (2006.01) G02F 1/015 (2006.01)

Patent

CA 1115398

ABSTRACT OF THE DISCLOSURE A heterojunction structure made of two semiconductor layers is disclosed in which light is applied to the structure and absorbed, and the emission of light from the structure is controlled by an electric field applied perpendicularly to the planes of the layers. The bottom of the conduction band of one of said materials is lower than the bottom of the conduction band of the other material, forming a series of potential wells and potential barriers. The top of the valance band of one of the materials is lower than the top of the valance band of the other material, to also form a series of poetential wells and potential barriers. A device is provided to direct light so as to create hole-electron pairs in said potential wells. A device is also provided to selectively apply a voltage across the layers to selectively cause changes in the spatial separation of the potential wells, and simultaneously cause selective recombination of the electrons and holes resulting in an emission of light.

313890

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