Controlled thickness of dielectric films on conductor edges

Details Controlled thickness of dielectric films on conductor edges Controlled thickness of dielectric films on conductor edges

H - Electricity

05

K

356/16, 356/197

H05K 1/11 (2006.01) H01L 21/00 (2006.01) H01L 21/8234 (2006.01) H01L 23/485 (2006.01) H01L 29/423 (2006.01) H01L 29/49 (2006.01) H05K 3/00 (2006.01)

Patent

CA 1061471

ABSTRACT: The invention relates to a method of manu- facturing a charge transfer device in which a semicon- ductor substrate is provided with a first insulating layer, a first conducting layer and a second insulating layer. In the second insulating layer and in the first conductive layer a firs-t conductor pattern is formed after which the edges of the conductors in the first conductive layer are oxidized in which the second insu- lating layer on the edges is thinner than of adjoining parts of the second insulating layer. A second conduct- ive layer is then provided in a second pat-tern. - 14 - _ 14 -

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