H - Electricity – 01 – P
Patent
H - Electricity
01
P
H01P 7/08 (2006.01) H03B 5/18 (2006.01)
Patent
CA 2328942
An oscillator circuit (20) having a flip chip metalization pattern and base substrate metalization pattern is defined such that a common-drain oscillator is configured with the common drain (38) interposed between the source (40) and gate (36) terminals, providing an effective RF common reference with reduced parasitic inductance elements which otherwise degrade oscillator power and phase noise at high frequencies.
L'invention concerne un montage oscillateur (20) comportant un réseau d'interconnexions de puces à bosses et un réseau d'interconnexions de substrat de base. Un oscillateur à drain commun est pourvu d'un drain commun (38) interposé entre les bornes de la source (40) et de la grille (36), ce qui permet d'obtenir une référence commune de RF effective avec des éléments à inductance parasite réduite qui, sinon, détériorent la puissance de l'oscillateur et le bruit de phase à hautes fréquences.
Mohwinkel Clifford A.
Stoneham Edward B.
Endwave Corporation
Fetherstonhaugh & Co.
LandOfFree
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