H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/00 (2006.01) H01L 29/06 (2006.01) H01L 29/12 (2006.01) H01S 5/34 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2455230
A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between adjacent layers of the device; and providing a layer of quantum dots (825, 875) disposed in one of the adjacent layers, and spaced from the quantum well, whereby carriers can tunnel in either direction between the quantum well and the quantum dots.
Un procédé de formation d'un dispositif semi-conducteur comprend les étapes suivantes: on utilise une pluralité de couches semi-conductrices; on utilise un/des moyens de couplage des signaux vers les couches du dispositif et/ou en provenance de ces dernières; on utilise un puits quantique situé entre des couches adjacentes du dispositif; et on utilise une couche de points quantiques (825, 875) située dans une des couches adjacentes et espacée du puits quantique, ceci permettant aux supports de se déplacer dans les deux sens entre le puits quantique et les points quantiques.
Dupuis Russell
Holonyak Nick Jr.
Board Of Regents The University Of Texas System
Goudreau Gage Dubuc
The Board Of Trustees Of The University Of Illinois
LandOfFree
Coupled quantum dot and quantum well semiconductor device... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Coupled quantum dot and quantum well semiconductor device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Coupled quantum dot and quantum well semiconductor device... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-2012116