G - Physics – 02 – F
Patent
G - Physics
02
F
345/56
G02F 1/015 (2006.01) G02F 1/017 (2006.01) H01L 31/0352 (2006.01)
Patent
CA 2008513
ABSTRACT A coupled quantum well electro-optical modulator is provided whose semiconductor structure has one or several sequences of layers comprising of two layers for forming quantum wells, and a barrier layer which separates the two layers, and an intrinsic layer which separates each sequence from other sequences of coupled quantum wells, the thickness of the barrier layer being such (about 33.ANG.) that in the presence of an electric field the absorption threshold of light radiation by the modulator shifts towards shorter wavelengths
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