G - Physics – 08 – B
Patent
G - Physics
08
B
340/124, 340/154
G08B 17/06 (2006.01) G08B 1/08 (2006.01) H01L 41/04 (2006.01) H01L 41/113 (2006.01)
Patent
CA 1214838
COUPLING CIRCUIT BETWEEN HIGH IMPEDANCE PIEZOELECTRIC SIGNAL SOURCE AND UTILIZING CIRCUIT ABSTRACT OF THE DISCLOSURE The high impedance output of a touch-sensitive piezoelectric sensor is coupled directly to the high im- pedance input of a CMOS (complementary metal oxide silicon field effect transistor pair). The CMOS is protected on its input side by clamps which restrict the voltage swing applied to the gates to within the range defined by the positive and negative CMOS bias supply (+VDD and -VSS). The sensor produces voltages of approximately equal magni- tude in response to slow acting temperature changes and quicker acting manual touching. In order to distinguish piezoelectric from pyroelectric signals, the CMOS bias is periodically and briefly shorted, to ensure a brief return- to-zero of the sensor output, thereby effectively suppress- ing the slow acting pyroelectric signal without interfer- ing with sensing of quick acting piezoelectric signals.
462377
Echols John C.
Staufenberg Charles W. Jr.
Essex-Tec Corporation
Meredith & Finlayson
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