Cross-point lightly-doped drain-source trench transistor and...

Details Cross-point lightly-doped drain-source trench transistor and... Cross-point lightly-doped drain-source trench transistor and...

H - Electricity

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L

356/149

H01L 29/76 (2006.01) H01L 21/223 (2006.01) H01L 21/8242 (2006.01) H01L 27/108 (2006.01) H01L 29/78 (2006.01) H01L 27/112 (2006.01)

Patent

CA 2006745

A CROSS-POINT LIGHTLY-DOPED DRAIN-SOURCE TRENCH TRANSISTOR AND FABRICATION PROCESS THEREFOR ABSTRACT OF THE INVENTION A structure and fabrication process for a self-aligned, lightly-doped drain/source n-channel field-effect transistor wherein a trench is formed in a well region in a wafer including an epitaxial layer on a substrate. A first, heavily doped drain region and bit line element is formed around the trench on the surface of the well, and a second, lightly-doped drain region is formed proximate to the first drain region and self-aligned to the trench sidewalls. A source region is located beneath the trench, which is filled with polysilicon, above which is gate and further polysilicon forming a transfer wordline. The well region at the trench sidewalls are doped to control the device threshold level, and the device is thereby also located at a wordline/bitline cross-point.

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