C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.55
C30B 19/06 (2006.01) C30B 19/04 (2006.01) C30B 19/10 (2006.01)
Patent
CA 1278984
ABSTRACT: Crucible for epitaxy from the liquid phase of semi- conductor layers having a controlled composition. The invention relates to a crucible for growing epitaxial layers having a chemical composition formed by several chemical elements, of which at least one is volatile, by the method of epitaxy from the liquid phase, comprising an elongate support (72) on which a movable part (73) slides longitudinally, the support comprising at least one recess for accommodating a substrate (76) on which at least one epitaxial layer is to be deposited, the movable part (73) comprising at least one cavity (77) receiving a mother source (79) formed by initial material for epitaxy, the cavity having on the surface adjoining the support a lower opening whose dimensions correspond to the dimensions of the substrates (76) present therein, and at least one receptacle (80) accommodating a source for each volatile element of the chemical composition. It is characterized in that at least one of the cavities of the movable part (77), for which a substrate (76) is present before the lower opening, has at least one upper opening formed solely by a calibra- ted conduit (78) each of which is connected to the receptacle (80) accommodating a source of each volatile element, each calibrated conduit (78) controlling the supply of the said element to the mother source by the surface of the mother source which is not in contact with the epitaxial layer. The calibrated conduit (78) maintains a substantially constant composition for the mother source. The invention is used in-growing epitaxial semiconductor layers of semiconductor compounds, especially of Hg1-xCdxTe. Application: growth of epitaxial layers. Reference: Fig. 1.
521144
Latorre Bernard
Montero Manuel
Fetherstonhaugh & Co.
N.v. Philips Gloeilampenfabrieken
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