Cryogenic semiconductor power devices

Details Cryogenic semiconductor power devices Cryogenic semiconductor power devices

H - Electricity

01

L

356/112

H01L 23/34 (2006.01) H01L 23/44 (2006.01)

Patent

CA 2021606

RD-19,680 CRYOGENIC SEMICONDUCTOR POWER DEVICES Abstract of the Disclosure A cryogenic solid-state semiconductor power device, has the actual device chip mounted on a substrate of a material of very high thermal conductivity, which is positioned in a a bath of inorganic fluid. The substrate may be formed of beryllia, beryllium, alumina, aluminum nitride, diamond and the like materials.

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