Crystal growing apparatus

C - Chemistry – Metallurgy – 30 – B

Patent

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Details

148/1.2

C30B 15/34 (2006.01) C30B 15/00 (2006.01)

Patent

CA 1320101

ABSTRACT Novel apparatus is disclosed for growing tubular crystalline bodies according to the EFG proces , wherein the apparatus has at least one exterior passage and at least one interior passage formed in its crucible-die assembly and associated parts, whereby gases introduced into the at least one exterior passage will be delivered to the zone located outside the growing crystalline body (i.e. the "exterior" zone) adjacent to the growth face on the die member, and gases introduced into the at least one interior passage will be delivered to the zone located inæide of the hollow crystalline body (i.e., the "interior" zone) adjacent to the growth face on the die member, whereby the atmosphere in each of the zones may be separately controlled. MTA-66

562543

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