Crystal manufacturing

C - Chemistry – Metallurgy – 30 – B

Patent

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Details

C30B 15/14 (2006.01)

Patent

CA 2664325

An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.

Cette invention concerne une application d'un procédé de tirage de cristaux de type Czochralski. Plus précisément, ce procédé fait intervenir un four avec isolation et système de flux appropriés dont il est avéré qu'ils améliorent la production de cristaux sous l'angle du rapport coût-efficacité. Des nouveautés apportés à la structure de zone chaude, aux flux gazeux et un processus de tirage permettent de réduire la consommation d'énergie, d'augmenter la durée de service des pièces de la zone chaude et d'améliorer le rendement du fait qu'il est possible d'ouvrir la zone chaude et d'adapter facilement cette dernière à un nouveau diamètre de cristal.

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